IKP20N60H3XKSA1

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IKP20N60H3XKSA1 - Infineon
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Краткое описание: 600V 40A TO-220 Insulated Gate Bipolar Transistor
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKP20N60H3XKSA1 is a 600V insulated gate bipolar transistor from Infineon, packaged in a TO-220 flange mount with a maximum collector current of 40A and maximum power dissipation of 170W. It has a collector-emitter breakdown voltage of 600V and a saturation voltage of 1.95V. The transistor is halogen free and lead free, and is compliant with RoHS standards. It operates over a temperature range of -40°C to 175°C.
RoHS Compliant
Mount Through Hole
Series TrenchStop®
Lead Free Lead Free
Input Type STANDARD
Halogen Free Halogen Free
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 500
Power Dissipation 170W
Max Collector Current 40A
Max Power Dissipation 170W
Reverse Recovery Time 112ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.4V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.95V

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