IKW15N120H3

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IKW15N120H3 - Infineon
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Краткое описание: IGBT 1200V 30A 175°C TO-247-3
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKW15N120H3 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 30A. It is packaged in a TO-247-3 flange mount package and has a maximum operating temperature of 175°C. The device is RoHS compliant and is suitable for use in high-power applications. The IGBT has a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 2.05V. It is also compliant with the standard package quantity of 240 units per rail/Tube packaging.
RoHS Compliant
Width 5.16mm
Height 21.1mm
Length 16.03mm
Series TrenchStop™
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 240
Reach SVHC Compliant No
Max Collector Current 30A
Max Power Dissipation 217W
Reverse Recovery Time 260ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.4V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.05V

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