IKW25N120T2

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IKW25N120T2 - Infineon
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Краткое описание: IGBT 1200V 50A TO-247-3 Flange Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKW25N120T2 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 50A. It is packaged in a TO-247-3 flange mount configuration and has a maximum power dissipation of 349W. The device operates over a temperature range of -40°C to 175°C and is compliant with RoHS and Reach SVHC regulations. The IGBT features a trench stop technology and has a reverse recovery time of 195ns.
RoHS Compliant
Width 5.21mm
Height 21.1mm
Length 16.13mm
Series TrenchStop™
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 240
Radiation Hardening No
Reach SVHC Compliant Yes
Max Collector Current 50A
Max Power Dissipation 349W
Reverse Recovery Time 195ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.2V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.2V

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