IKW40N120H3

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IKW40N120H3 - Infineon
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Краткое описание: IGBT 1200V 80A TO-247-3 Flange Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IKW40N120H3 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 80A. It features a TO-247-3 package and is designed for flange mount applications. The device has a maximum power dissipation of 483W and operates within a temperature range of -40°C to 175°C. The IKW40N120H3 is compliant with RoHS regulations and is available in a rail/Tube packaging configuration.
RoHS Compliant
Width 5.16mm
Height 21.1mm
Length 16.03mm
Series TrenchStop™
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 240
Power Dissipation 483W
Reach SVHC Compliant No
Max Collector Current 80A
Max Power Dissipation 483W
Reverse Recovery Time 355ns
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.4V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.05V

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