ILD1-X001
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Краткое описание:
Dual BJT Transistor, 50V, 400mA, 250mW, Through Hole, PDIP-8
Дополнительная информация
The ILD1-X001 is a dual BJT transistor with a collector-emitter saturation voltage of 400mV and a collector-emitter voltage of 50V. It can handle a maximum collector current of 400mA and a maximum power dissipation of 250mW. The device is packaged in a PDIP-8 package and is designed for through-hole mounting. The operating temperature range is -40°C to 100°C, and it is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Input Type | DC |
| Package/Case | PDIP |
| RoHS Compliant | Yes |
| Forward Current | 60mA |
| Package Quantity | 2000 |
| Max Input Current | 60mA |
| Power Dissipation | 250mW |
| Max Output Voltage | 50V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Collector Current | 400mA |
| Max Power Dissipation | 250mW |
| Current Transfer Ratio | 300% |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 6V |
| Output Current per Channel | 50mA |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Saturation Voltage | 400mV |
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