IMD6AT108
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NPN/PNP BJT Transistor, 50V, 100mA, 250MHz, SMT
Дополнительная информация
Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity. Offers a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. This silicon transistor operates with a 300mV collector-emitter voltage and a 5V emitter-base voltage. With a minimum hFE of 100 and a transition frequency of 250MHz, it is suitable for small signal applications. Packaged in SMT6 (SC-74) for tape and reel distribution, this component is RoHS compliant and rated for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 250MHz |
| Max Power Dissipation | 300mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 50V |
| Collector Emitter Voltage (VCEO) | 300mV |
| Collector Emitter Breakdown Voltage | 50V |
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