IMX8-7-F

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IMX8-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 120V, 50mA, 140MHz, SOT-26
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 120V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 50mA. Operates with a transition frequency of 140MHz and a minimum hFE of 180. Housed in a 6-lead SOT-26 plastic package for surface mounting, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.6mm
Height 1.1mm
Length 3mm
Weight 0.001058oz
hFE Min 180
Polarity NPN
Frequency 140MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-26
Max Frequency 140MHz
Current Rating 50mA
RoHS Compliant Yes
DC Rated Voltage 120V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 2
Radiation Hardening No
Transition Frequency 140MHz
Max Breakdown Voltage 120V
Max Collector Current 50mA
Max Power Dissipation 300mW
Gain Bandwidth Product 140MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 120V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 120V
Collector Emitter Breakdown Voltage 120V
Collector Emitter Saturation Voltage 500mV

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