IPA075N15N3G
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Краткое описание:
Power Field-Effect Transistor, 43A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220-FP, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 43A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220-FP, 3 PIN
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 7.5mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 7.28nF |
| Power Dissipation | 39W |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 39W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain to Source Breakdown Voltage | 150V |
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