IPA086N10N3 G
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Краткое описание:
N-CH Power MOSFET 100V 45A TO-220FP OptiMOS
Дополнительная информация
N-channel enhancement mode power MOSFET, featuring 100V drain-source voltage and 45A continuous drain current. This single-element transistor utilizes OptiMOS process technology and offers a low 8.6 mOhm drain-source on-resistance at 10V. Packaged in a TO-220FP (Transistor Outline Package Fullpak) with 3 through-hole pins and a tab, it supports through-hole mounting. Operating across a wide temperature range from -55°C to 175°C, it has a maximum power dissipation of 37.5W.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220FP |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7 |
| Process Technology | OptiMOS |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16 |
| Package Length (mm) | 10.5 |
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 37500mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 42nC |
| Typical Gate Charge @ Vgs | 42@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 8.6@10VmOhm |
| Typical Input Capacitance @ Vds | 2990@50VpF |
| Maximum Continuous Drain Current | 45A |
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