IPA105N15N3 G

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IPA105N15N3 G - Infineon
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Краткое описание: N-CH MOSFET 150V 37A TO-220FP Power Transistor
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 150V drain-source voltage, 37A continuous drain current. Features OptiMOS process technology, TO-220FP package with 3 pins and tab, through-hole mounting. Offers low drain-source on-resistance of 10.5 mOhm at 10V, typical gate charge of 41 nC, and input capacitance of 3230 pF at 75V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 40.5W.
PCB 3
Tab Tab
ECCN EAR99
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220FP
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Basic Package Type Through Hole
Package Width (mm) 4.7
Process Technology OptiMOS
Package Description Transistor Outline Package Fullpak
Package Family Name TO-220
Package Height (mm) 16
Package Length (mm) 10.5
Radiation Hardening No
Max Operating Temperature 175°C
Maximum Power Dissipation 40500mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 41nC
Typical Gate Charge @ Vgs 41@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 150V
Maximum Drain Source Resistance 10.5@10VmOhm
Typical Input Capacitance @ Vds 3230@75VpF
Maximum Continuous Drain Current 37A

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