IPA50R950CE
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Краткое описание:
500V 6.6A N-CH Power MOSFET TO-220FP
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source voltage and 6.6A continuous drain current. This single-element transistor utilizes CoolMOS CE technology and offers a low drain-source on-resistance of 950mOhm at 13V. Packaged in a 3-pin TO-220FP (Transistor Outline Package Fullpak) with through-hole mounting, it operates from -40°C to 150°C. Key specifications include a 10.5nC typical gate charge and 231pF typical input capacitance.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220FP |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7 |
| Process Technology | CoolMOS CE |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 15.99 |
| Package Length (mm) | 10.5 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 25700mW |
| Min Operating Temperature | -40°C |
| Typical Gate Charge @ 10V | 10.5nC |
| Typical Gate Charge @ Vgs | 10.5@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 950@13VmOhm |
| Typical Input Capacitance @ Vds | 231@100VpF |
| Maximum Continuous Drain Current | 6.6A |
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