IPA60R330P6XKSA1

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IPA60R330P6XKSA1 - Infineon
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Краткое описание: 600V 12A N-Channel MOSFET TO-220FP 330mR
Производитель Infineon
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel MOSFET, 600V Vdss, 12A continuous drain current, and 330mR Rds On. Features TO-220-3 through-hole package, 32W power dissipation, and 150°C max operating temperature. Includes 7ns fall time, 12ns turn-on delay, and 33ns turn-off delay. Halogen and lead-free, RoHS compliant.
RoHS Compliant
Mount Through Hole
Series CoolMOS™ P6
Weight 0.211644oz
FET Type 1 N-Channel
Polarity N-CHANNEL
Fall Time 7ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 330mR
Halogen Free Halogen Free
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 1.01nF
Power Dissipation 32W
Number of Channels 1
Turn-On Delay Time 12ns
On-State Resistance 330mR
Turn-Off Delay Time 33ns
Max Power Dissipation 32W
Max Dual Supply Voltage 600V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 297mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12A
Drain to Source Voltage (Vdss) 600V

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