IPA60R600P6XKSA1
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Краткое описание:
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, FULL PACK-3
Дополнительная информация
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, FULL PACK-3
| RoHS | Compliant |
| Mount | Through Hole |
| Series | CoolMOS™ P6 |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Rds On Max | 600mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 557pF |
| Power Dissipation | 28W |
| Turn-On Delay Time | 11ns |
| On-State Resistance | 600mR |
| Turn-Off Delay Time | 33ns |
| Max Power Dissipation | 28W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 540mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Voltage (Vdss) | 600V |
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