IPA60R950C6
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Краткое описание:
600V N-CH Power MOSFET, 4.4A, TO-220FP
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 4.4A continuous drain current. This single-element transistor utilizes CoolMOS C6 process technology and is housed in a 3-pin TO-220FP package for through-hole mounting. Key specifications include a maximum gate-source voltage of 20V, a typical gate threshold voltage of 3.5V, and a low drain-source on-resistance of 950mOhm at 10V. Operating across a wide temperature range from -55°C to 150°C, this component offers 26W maximum power dissipation.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220FP |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.7 |
| Process Technology | CoolMOS C6 |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16 |
| Package Length (mm) | 10.5 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 26000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 13nC |
| Typical Gate Charge @ Vgs | 13@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 950@10VmOhm |
| Typical Input Capacitance @ Vds | 280@100VpF |
| Maximum Continuous Drain Current | 4.4A |
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