IPA60R950C6XKSA1
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Краткое описание:
600V 4.4A N-Channel MOSFET TO-220-3 950mR
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.4A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 950mΩ and a maximum power dissipation of 26W. Designed for efficient switching, it exhibits a fall time of 13ns and turn-on delay of 10ns. Packaged in a TO-220AB full pack, this component is halogen-free, lead-free, and RoHS compliant, operating within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Width | 4.9mm |
| Height | 16.15mm |
| Length | 10.65mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 950mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 280pF |
| Power Dissipation | 26W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| On-State Resistance | 950mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 26W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 860mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
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