IPA65R095C7XKSA1
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Краткое описание:
Power Field-Effect Transistor, 12A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 12A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
| RoHS | Compliant |
| Mount | Through Hole |
| Series | CoolMOS™ C7 |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Rds On Max | 95mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 2.14nF |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 34W |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
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