IPA65R225C7XKSA1
Производится
Увеличить
Краткое описание:
Power Field-Effect Transistor, 7A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 7A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
| RoHS | Compliant |
| Mount | Through Hole |
| Series | CoolMOS™ C7 |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Rds On Max | 225mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 996pF |
| Power Dissipation | 29W |
| Turn-On Delay Time | 9ns |
| On-State Resistance | 225mR |
| Turn-Off Delay Time | 48ns |
| Max Power Dissipation | 29W |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 199mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
