IPB014N06NATMA1
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N-Channel MOSFET, 60V, 180A, 1.4mR, TO-263
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Voltage, 1.4mΩ On-State Resistance, and 180A Continuous Drain Current. This silicon Metal-oxide Semiconductor FET features a TO-263-7 package, 214W power dissipation, and operates from -55°C to 175°C. It offers a 2.8V threshold voltage, 14ns fall time, and 22ns turn-on delay. The component is halogen-free and RoHS compliant.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 7.8nF |
| Power Dissipation | 214W |
| Threshold Voltage | 2.8V |
| Turn-On Delay Time | 22ns |
| On-State Resistance | 1.4mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 214W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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