IPB016N06L3GATMA1
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Краткое описание:
Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
Дополнительная информация
Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Fall Time | 38ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.6mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Input Capacitance | 28nF |
| Power Dissipation | 250W |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 131ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 250W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 60V |
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