IPB017N06N3GATMA1
Производится
Увеличить
Краткое описание:
N-Ch MOSFET, 60V, 180A, 1.7mR, TO-263-7, SM
Дополнительная информация
N-Channel Power MOSFET, 60V Vds, 180A continuous drain current, and 1.7mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-263-7 package for surface mounting, offering a maximum power dissipation of 250W and operating temperature range from -55°C to 175°C. Key switching characteristics include a 41ns turn-on delay, 24ns fall time, and 79ns turn-off delay. It is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Fall Time | 24ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Input Capacitance | 23nF |
| Power Dissipation | 250W |
| Number of Elements | 1 |
| Turn-On Delay Time | 41ns |
| Turn-Off Delay Time | 79ns |
| Max Power Dissipation | 250W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
