IPB022N04LG
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N-Channel MOSFET, 40V, 90A, 2.2mR, TO-263
Дополнительная информация
N-channel MOSFET transistor featuring 40V drain-source breakdown voltage and 90A continuous drain current. Offers low on-resistance of 1.8 mΩ at 10V gate-source voltage, with a maximum of 11.8 mΩ. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 167W. Packaged in a TO-263-3 case and supplied on tape and reel.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Tape and Reel |
| Rds On Max | 11.8mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.6nF |
| Power Dissipation | 167W |
| Threshold Voltage | 1.2V |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 66ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 40V |
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