IPB025N10N3GATMA1
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Краткое описание:
100V 180A N-Ch MOSFET, 2.5mR RdsOn, TO-263
Дополнительная информация
N-Channel Power MOSFET, 100V Vds, 180A continuous drain current, and 2.5mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-263 package for surface mounting and offers a maximum power dissipation of 300W. Operating temperature range spans from -55°C to 175°C, with turn-on delay time of 34ns and turn-off delay time of 84ns. Halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Fall Time | 28ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Input Capacitance | 14.8nF |
| Power Dissipation | 300W |
| Number of Elements | 1 |
| Turn-On Delay Time | 34ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 84ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
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