IPB026N06NATMA1
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Краткое описание:
Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
Дополнительная информация
Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.6mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 4.1nF |
| Power Dissipation | 136W |
| Turn-On Delay Time | 17ns |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 136W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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