IPB029N06N3GE8187ATMA1

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IPB029N06N3GE8187ATMA1 - Infineon
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Краткое описание: N-CHANNEL MOSFET 60V 120A 3.2mR 175°C TO-263-3
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IPB029N06N3GE8187ATMA1 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 120A and a drain to source voltage of 60V. The device features a drain to source resistance of 2.9mR and a gate to source voltage of 20V. It is packaged in a TO-263-3 case and is not RoHS compliant.
RoHS Not Compliant
Mount Surface Mount
Width 9.45mm
Height 4.57mm
Length 10.31mm
Series OptiMOS™
Weight 0.068654oz
Polarity N-CHANNEL
Packaging Tape and Reel
Rds On Max 3.2mR
Package/Case TO-263-3
RoHS Compliant No
Package Quantity 1000
Input Capacitance 13nF
Number of Channels 1
Turn-On Delay Time 35ns
Turn-Off Delay Time 62ns
Max Power Dissipation 188W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 60V

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