IPB039N10N3GATMA1
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Краткое описание:
100V 160A N-Ch MOSFET, 3.9mR Rds On, TO-263-7
Дополнительная информация
N-Channel Power MOSFET, 100V Vds, 160A Continuous Drain Current, 3.9mΩ Rds On. Features 214W Power Dissipation, 175°C Max Operating Temperature, and Surface Mount TO-263-7 package. Silicon Metal-oxide Semiconductor FET with 8.41nF Input Capacitance. RoHS compliant and Halogen Free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 3.9mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Input Capacitance | 8.41nF |
| Power Dissipation | 214W |
| Number of Elements | 1 |
| Max Power Dissipation | 214W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 100V |
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