IPB049NE7N3 G
Производится
Увеличить
Краткое описание:
N-CH 75V 80A Power MOSFET, D2PAK, OptiMOS
Дополнительная информация
Automotive N-channel Power MOSFET, surface mountable in a D2PAK (TO-263) package. Features 75V drain-source voltage, 80A continuous drain current, and low 4.9mOhm drain-source resistance at 10V. OptiMOS process technology ensures efficient performance with a typical gate charge of 51nC. Operating temperature range from -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 9.45(Max) |
| Process Technology | OptiMOS |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.57(Max) |
| Package Length (mm) | 10.31(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 51nC |
| Typical Gate Charge @ Vgs | 51@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 75V |
| Maximum Drain Source Resistance | 4.9@10VmOhm |
| Typical Input Capacitance @ Vds | [email protected]pF |
| Maximum Continuous Drain Current | 80A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
