IPB049NE7N3GATMA1
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Краткое описание:
Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Дополнительная информация
Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
| RoHS | Compliant |
| Mount | Surface Mount |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Halogen Free | Halogen Free |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Power Dissipation | 150W |
| Threshold Voltage | 3.1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 75V |
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