IPB100N04S2-04
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Краткое описание:
N-CHANNEL MOSFET 40V 100A 300W TO-263-3
Дополнительная информация
The IPB100N04S2-04 is a high-power N-channel MOSFET from Infineon, featuring a maximum drain current of 100A and a maximum drain to source breakdown voltage of 40V. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 300W. The device is packaged in a TO-263-3 case and is available in quantities of 1000 on tape and reel. It is compliant with RoHS regulations and is part of Infineon's OptiMOS series.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 5.3nF |
| Power Dissipation | 300W |
| Turn-Off Delay Time | 56ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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