IPB100N04S4H2ATMA1
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 100A, 40V, 2.4mR Rds On, TO-263
Дополнительная информация
N-channel Power MOSFET featuring 40V drain-source breakdown voltage and 100A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 2.4mΩ drain-source resistance. Operating from -55°C to 175°C, it has a maximum power dissipation of 115W and is packaged in a TO-263-3 surface-mount case. Key switching characteristics include a 21ns fall time, 19ns turn-off delay, and 18ns turn-on delay. This RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Width | 9.25mm |
| Height | 4.4mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 7.18nF |
| Power Dissipation | 115W |
| Turn-On Delay Time | 18ns |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 115W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
