IPB107N20N3 G
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Краткое описание:
N-CH Power MOSFET 200V 88A D2PAK (TO-263) SM
Дополнительная информация
N-channel Power MOSFET, OptiMOS technology, 200V drain-source voltage, 88A continuous drain current, and 10.7mΩ drain-source resistance at 10V. Features a 3-pin D2PAK (TO-263AB) surface-mount package with a typical gate charge of 65nC. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 300W.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-263AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Package Width (mm) | 9.45(Max) |
| Process Technology | OptiMOS |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.57(Max) |
| Package Length (mm) | 10.31(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.82(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 65nC |
| Typical Gate Charge @ Vgs | 65@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 10.7@10VmOhm |
| Typical Input Capacitance @ Vds | 5340@100VpF |
| Maximum Continuous Drain Current | 88A |
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