IPB120N06S403ATMA2

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IPB120N06S403ATMA2 - Infineon
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Краткое описание: N-Channel MOSFET, 60V, 120A, 2.8mR, TO-263
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 60V Vdss, 120A continuous drain current, and 2.8mΩ Rds On. This surface-mount device features a TO-263-3 package, 167W max power dissipation, and operates from -55°C to 175°C. Designed for automotive applications, it offers 40ns turn-on and 80ns turn-off delay times.
RoHS Compliant
Mount Surface Mount
Width 9.25mm
Height 4.4mm
Length 10mm
Series Automotive, AEC-Q101, OptiMOS™
Weight 0.068654oz
Polarity N-CHANNEL
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 3.2mR
Halogen Free Halogen Free
Package/Case TO-263-3
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 13.15nF
Number of Channels 1
Turn-On Delay Time 40ns
Turn-Off Delay Time 80ns
Max Power Dissipation 167W
Max Dual Supply Voltage 60V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 60V

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