IPB120N06S4H1ATMA2
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Краткое описание:
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
Дополнительная информация
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 21.9nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 250W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
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