IPB160N04S2L-03
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Краткое описание:
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
Дополнительная информация
Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Packaging | Tape and Reel |
| Rds On Max | 2.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 6nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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