IPB180N10S402ATMA1
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Краткое описание:
100V 180A N-Channel MOSFET, 2.5mR Rds(on), TO-263
Дополнительная информация
N-Channel Power MOSFET, 100V Vdss, 180A continuous drain current, and 2.5mΩ Rds On resistance. Features a TO-263-7 surface mount package, 300W power dissipation, and operates from -55°C to 175°C. Includes 15ns turn-on delay, 30ns turn-off delay, and 40ns fall time. Halogen-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.5mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 14.6nF |
| Power Dissipation | 300W |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| On-State Resistance | 2.5mR |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
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