IPB200N15N3GATMA1

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IPB200N15N3GATMA1 - Infineon
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Краткое описание: 150V 50A N-Channel MOSFET TO-263 Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IPB200N15N3GATMA1 is a 150V 50A N-Channel MOSFET packaged in a TO-263 surface mount package. It operates over a temperature range of -55°C to 175°C and is RoHS compliant. The device has a maximum power dissipation of 150W and a maximum on-state resistance of 20mR.
RoHS Compliant
Mount Surface Mount
Fall Time 6ns
Lead Free Contains Lead
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case TO-263
RoHS Compliant Yes
Package Quantity 1000
Input Capacitance 1.82nF
Power Dissipation 150W
Number of Elements 1
Turn-On Delay Time 14ns
On-State Resistance 20mR
Radiation Hardening No
Turn-Off Delay Time 23ns
Max Dual Supply Voltage 150V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 16mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Drain to Source Voltage (Vdss) 150V

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