IPB200N25N3GATMA1
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Краткое описание:
250V 64A N-Ch MOSFET TO-263-3 Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 250V drain-to-source voltage and 64A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 20mΩ Rds On resistance, ideal for high-power applications. With a maximum power dissipation of 300W and an operating temperature range of -55°C to 175°C, it provides robust performance. Surface mountable in a TO-263-3 package, it boasts fast switching characteristics with a 12ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Fall Time | 12ns |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rds On Max | 20mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 7.1nF |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Voltage (Vdss) | 250V |
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