IPB22N03S4L15ATMA1
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Краткое описание:
30V 22A N-Channel MOSFET, 14.6mR Rds(on), TO-263
Дополнительная информация
N-channel power MOSFET for surface mount applications. Features 30V drain-source breakdown voltage, 22A continuous drain current, and low 14.6mΩ on-state resistance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 31W. Packaged in a TO-263-3 surface mount package, this RoHS compliant component offers fast switching with 3ns turn-on and 12ns turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 4.7mm |
| Series | OptiMOS™ |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 14.6mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 980pF |
| Power Dissipation | 31W |
| Number of Channels | 1 |
| Turn-On Delay Time | 3ns |
| On-State Resistance | 14.6mR |
| Turn-Off Delay Time | 12ns |
| Max Power Dissipation | 31W |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12.4mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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