IPB320N20N3 G
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Краткое описание:
200V 34A N-CH Power MOSFET D2PAK TO-263
Дополнительная информация
N-channel Power MOSFET featuring OptiMOS process technology, designed for 200V drain-source voltage and 34A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 32mΩ at 10V. Packaged in a surface-mount D2PAK (TO-263AA) with gull-wing leads, it provides efficient thermal management with a maximum power dissipation of 136W. Operating temperature range spans from -55°C to 175°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-263AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.25 |
| Process Technology | OptiMOS |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.4 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.5 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 136000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 22nC |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 32@10VmOhm |
| Typical Input Capacitance @ Vds | 1770@100VpF |
| Maximum Continuous Drain Current | 34A |
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