IPB60R299CPAATMA1
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Краткое описание:
600V 11A N-Ch MOSFET, 299mR RdsOn, TO-263
Дополнительная информация
N-Channel Power MOSFET, 600V Vds, 11A continuous drain current, and 299mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 1.1nF input capacitance and 96W power dissipation. Designed for surface mount applications in a TO-263-3 package, it operates from -40°C to 150°C. RoHS compliant and halogen-free, this component is suitable for automotive applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 299mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 1.1nF |
| Power Dissipation | 96W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 96W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
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