IPB77N06S2-12
Производится
Увеличить
Краткое описание:
N-CHANNEL MOSFET 55V 77A 158W TO-263-3
Дополнительная информация
The IPB77N06S2-12 is a high-power N-channel MOSFET from Infineon with a maximum drain current of 77A and a maximum drain to source breakdown voltage of 55V. It features a TO-263-3 package and operates within a temperature range of -55°C to 175°C. The device is RoHS compliant and suitable for use in high-temperature applications.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Packaging | Tape and Reel |
| Rds On Max | 11.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 1.77nF |
| Power Dissipation | 158W |
| Turn-On Delay Time | 14ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Max Power Dissipation | 158W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
