IPB80N03S4L03ATMA1
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Краткое описание:
N-Channel MOSFET, 80A, 30V, 3.4mR, TO-263
Дополнительная информация
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3.4mΩ on-state resistance and 94W maximum power dissipation. Designed for efficient switching, it exhibits a 9ns turn-on delay and 7ns fall time. Packaged in a TO-263-3 surface-mount format, this RoHS compliant component operates from -55°C to 175°C.
| RoHS | Compliant |
| Width | 9.45mm |
| Height | 4.572mm |
| Length | 10.31mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 3.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.1nF |
| Power Dissipation | 94W |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| On-State Resistance | 3.4mR |
| Turn-Off Delay Time | 37ns |
| Max Power Dissipation | 94W |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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