IPB80N04S404ATMA1
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Краткое описание:
N-Channel MOSFET, 80A, 40V, 4.2mR, TO-263
Дополнительная информация
N-channel silicon MOSFET, 40V drain-source breakdown voltage, 80A continuous drain current, and 4.2mΩ maximum drain-source resistance. Features include 175°C maximum operating temperature, 71W power dissipation, and 3.44nF input capacitance. Packaged in a TO-263-3 surface-mount package, this component offers fast switching with turn-on and turn-off delay times of 10ns and 9ns respectively.
| RoHS | Compliant |
| Width | 9.25mm |
| Height | 4.4mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 3.44nF |
| Power Dissipation | 71W |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 9ns |
| Max Power Dissipation | 71W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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