IPB80N06S2-07
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Краткое описание:
80A 55V N-Channel MOSFET, 6.3mR Rds On, TO-263
Дополнительная информация
N-Channel Power MOSFET, 55V Vds, 80A Continuous Drain Current, and 6.3mΩ Rds On. Features include a 250W power dissipation, 175°C max operating temperature, and fast switching times with 16ns turn-on and 36ns fall times. Packaged in a TO-263-3 surface-mount package, this silicon metal-oxide semiconductor FET is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Width | 9.25mm |
| Height | 4.4mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Packaging | Tape and Reel |
| Rds On Max | 6.3mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 3.4nF |
| Power Dissipation | 250W |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 61ns |
| Max Power Dissipation | 250W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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