IPB80N06S2L07ATMA3
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Краткое описание:
80A 55V N-Channel MOSFET TO-263-3 6.7mR
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers low on-state resistance of 6.7mΩ (max) and 5.3mΩ (typ) for efficient power switching. Operates within a wide temperature range of -55°C to 175°C with a maximum power dissipation of 210W. Packaged in a TO-263-3 surface-mount package, this halogen-free component is supplied on tape and reel.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 6.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 3.16nF |
| Power Dissipation | 210W |
| Turn-On Delay Time | 18ns |
| On-State Resistance | 6.7mR |
| Turn-Off Delay Time | 28ns |
| Max Power Dissipation | 210W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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