IPB80N06S405ATMA2
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N-Channel MOSFET, 60V, 80A, 5.4mR Rds(on), TO-263
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.7mΩ on-state resistance and 107W power dissipation. Designed for surface mounting in a TO-263-3 package, it operates across a wide temperature range of -55°C to 175°C. Key specifications include 6.5nF input capacitance, 8ns fall time, and 20ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.25mm |
| Height | 4.4mm |
| Length | 10mm |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Weight | 0.068654oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 5.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 6.5nF |
| Power Dissipation | 107W |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| On-State Resistance | 5.4mR |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 107W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
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