IPB80N06S4L-07
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Краткое описание:
N-Channel MOSFET, 60V, 80A, 6.4mR, TO-263
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 6.4mΩ drain-source resistance (Rds On Max) and 79W power dissipation. Packaged in a TO-263-3 format, it operates from -55°C to 175°C and includes fast switching characteristics with a 8ns fall time. Halogen-free and RoHS compliant, this component is supplied on tape and reel.
| RoHS | Compliant |
| Width | 9.25mm |
| Height | 4.4mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Tape and Reel |
| Rds On Max | 6.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 5.68nF |
| Power Dissipation | 79W |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 79W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.4mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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