IPB90N06S4L04ATMA2
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Краткое описание:
60V 90A N-Channel MOSFET, 3.4mR Rds(on), TO-263
Дополнительная информация
N-Channel Power MOSFET, 60V Vds, 90A continuous drain current, and 3.4mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 150W max power dissipation, and operates from -55°C to 175°C. It includes a 13nF input capacitance and 140ns turn-off delay. Designed for automotive applications, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.25mm |
| Height | 4.4mm |
| Length | 10mm |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Weight | 0.068654oz |
| Polarity | N-CHANNEL |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 3.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 13nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 21ns |
| Turn-Off Delay Time | 140ns |
| Max Power Dissipation | 150W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.4mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
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