IPD031N06L3GATMA1
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Краткое описание:
60V 100A N-Ch MOSFET, 3.1mR Rds On, TO-252
Дополнительная информация
N-channel silicon power MOSFET featuring a 60V drain-source voltage and 100A continuous drain current. This surface-mount device offers a low 3.1mΩ Rds On resistance and a maximum power dissipation of 167W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a 25ns turn-on delay and 13ns fall time. Packaged in a TO-252-3 case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Fall Time | 13ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 3.1mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 13nF |
| Power Dissipation | 167W |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 64ns |
| Max Power Dissipation | 167W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
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