IPD034N06N3 G
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Краткое описание:
N-CH 60V 100A Power MOSFET DPAK SMT
Дополнительная информация
N-channel enhancement mode power MOSFET in a DPAK package, featuring a 60V drain-source voltage and 100A continuous drain current. This surface-mount component offers a low 3.4mOhm drain-source resistance at 10V gate-source voltage and utilizes OptiMOS process technology. The 3-pin DPAK package, also known as TO-252AA, has a plastic construction with gull-wing leads and a tab for enhanced thermal performance, with dimensions of 6.5mm length, 6.22mm width, and 2.3mm height. Operating temperature range is from -55°C to 175°C, with a maximum power dissipation of 167W.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22 |
| Process Technology | OptiMOS |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.3 |
| Package Length (mm) | 6.5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.51(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 167000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 98nC |
| Typical Gate Charge @ Vgs | 98@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Drain Source Resistance | 3.4@10VmOhm |
| Typical Input Capacitance @ Vds | 8000@30VpF |
| Maximum Continuous Drain Current | 100A |
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