IPD060N03LGATMA1

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IPD060N03LGATMA1 - Infineon
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Краткое описание: N-Channel MOSFET, 30V, 50A, 6mR, TO-252, Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, TO-252 package, featuring 30V drain-source voltage and 50A continuous drain current. Offers a low 6mΩ on-state resistance (Rds On) and 56W maximum power dissipation. Designed for surface mounting with a 2.4nF input capacitance and 5ns turn-on delay. Operates across a wide temperature range from -55°C to 175°C, with RoHS compliance.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.41mm
Length 6.73mm
Series OptiMOS™
Polarity N-CHANNEL
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 6mR
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 2.4nF
Turn-On Delay Time 5ns
On-State Resistance 6mR
Turn-Off Delay Time 20ns
Max Power Dissipation 56W
Max Dual Supply Voltage 30V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Drain to Source Voltage (Vdss) 30V

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